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[Analysis Case] Damage Assessment of Single Crystal Si Surface

Quantitative analysis of c-Si and a-Si by state is possible using high-resolution measurement and waveform analysis.

In the semiconductor manufacturing process, ion irradiation is sometimes performed for the purpose of surface modification. It is known that irradiating the surface of single-crystal Si with ions of inert elements can cause structural damage and lead to the formation of an amorphous layer. Utilizing the fact that high-resolution XPS spectra detect c (single-crystal) Si and a (amorphous) Si with different peak shapes, we will introduce a case where this damage-derived a-Si was separated from c-Si and quantitatively evaluated.

• Company：一般財団法人材料科学技術振興財団　MST
• Price：Other

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